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HiPerFETTM Power MOSFETs
IXFK30N100Q2 IXFX30N100Q2
VDSS ID25 trr
Q2-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque Mounting force TO-264 PLUS247 (IXFK) (IXFX) Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 1000 1000 30 40 30 120 30 4 20 735 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120 /4.5..27 10 6 V V V V A A A J V/ns W C C C C C Nm/lb.in. N/lb. g g
RDS(on)
= 1000V = 30A 400m 300ns
TO-264 (IXFK)
G
D
S
(TAB)
PLUS247 (IXFX)
(TAB) G = Gate S = Source D = Drain TAB = Drain
Features * Double metal process for low gate resistance * International standard packages * Epoxy meet UL 94 V-0, flammability classification * Avalanche energy and current rated * Fast intrinsic Rectifier Advantages * Easy to mount * Space savings * High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 1000 3.0 5.5 200 TJ = 125C 50 2 400 V V nA A mA m
BVDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2008 IXYS CORPORATION,All rights reserved
DS99160A(5/08)
IXFK30N100Q2 IXFX30N100Q2
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/s VR = 100V, VGS = 0V 1 10 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS= 10V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 20 30 9400 766 153 22 14 60 10 186 46 82 0.17 S pF pF pF ns ns ns ns nC nC nC C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 (IXFK) Outline
Characteristic Values TJ = 25C unless otherwise specified) Min. Typ. Max. 30 120 1.5 300 A A V ns C A
PLUS247TM (IXFX) Outline
Note 1: Pulse test, t 300s; duty cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFK30N100Q2 IXFX30N100Q2
Fig. 1. Output Characteristics @ 25C
30 27 24 21 VGS = 10V 7V 50 40 6V 30 20 5.5V 5V 10 0 0 1 2 3 4 5 6 7 8 9 10 11 12
0 3 6 9 12 15 18 21 24 27 30
Fig. 2. Extended Output Characteristics @ 25C
60 VGS = 10V 7V
I D - Amperes
18 15 12 9 6 3 0
5.5V
I D - Amperes
6V
5V
V D S - Volts Fig. 3. Output Characteristics @ 125C
30 27 24 VGS = 10V 6V 2.8 3.2 VGS = 10V
V DS - Volts Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature
R D S ( o n ) - Normalized
I D - Amperes
21 18 15 12 9 6 3 0 0 3 6 9 12 15 4.5V 18 21 24 27 5V 5.5V
2.4 2.0 ID = 30A 1.6 1.2 0.8 0.4 -50 -25 0 25 50 75 100 125 150 ID = 15A
VD S - Volts Fig. 5. RDS(on) Normalized to 0.5 I D25 Value vs. I D
2.6 2.4 TJ = 125C 33 30 27 24
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature
R D S ( o n ) - Normalized
2.2
I D - Amperes
TJ = 25C
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 5 10 15 20 25
D
21 18 15 12 9 6 3 0 -50 -25 0 25 50 75 100 125 150
VGS = 10V
30 35
40 45
50 55
60
I
- Amperes
T C - Degrees Centigrade
(c) 2008 IXYS CORPORATION,All rights reserved
IXFK30N100Q2 IXFX30N100Q2
Fig. 7. Input Admittance
40 35 30 TJ = 125C 25C - 40C 60 55 50 45 TJ = - 40C
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
25 20 15 10 5 0 3.5 4.0 4.5
40 35 30 25 20 15 10 5 0
25C 125C
5.0
5.5
6.0
6.5
0
5
10
15
20
25
30
35
40
45
50
V GS - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
90 80 70 10 9 8 7 VDS = 500V ID = 1 5A IG = 10mA
I
D
- Amperes
Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 125C TJ = 25C
60 50 40 30 20 10 0 0.3 0.4 0.5 0.6 0.7
D
6 5 4 3 2 1 0
0.8
0.9
1.0
1.1
1.2
0
20
40
60
80
G
100 120 140 160 180 200
VS
- Volts
Q
- nanoCoulombs
Fig. 11. Capacitance
100000 1.00
Fig. 12. Maximum Transient Thermal Impedance
f = 1MHz Capacitance - picoFarads Z ( t h ) J C - C / W
Ciss 10000
0.10
Coss 1000 C rss
0.01
100 0 5 10 15 20 25 30 35 40
0.00 0.1 1 10 100 1000
VD S - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_30N100Q2(94)5-27-08-A

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